( 100µµs )FEATURES :* High current capability* High surge current capability* High reliability* Low reverse current datasheet search, datasheets, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes and other semiconductors. ; Type W3842MC28A Issue A1 Page 3 of 9 June, 2017 . 5. RS Product Codes. 50 ns • General application Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings V DSS T J = 25°C to 150°C 1000 V V DGR T J = 25°C to 150°C, R GS = 1MΩ 1000 V V GSS Continuous ± 30 V V GSM Transient ± 40 V I D25 T C = 25°C44A I DM T C = 25°C, pulse width limited by T JM 110 A I AR T C = 25°C22A E AS T C = 25°C2J dV/dt I S ≤ I DM Conditions = 125°C; rectangular, = 125°C; rectangular, = 0.5; per device TVJ ms (50 Hz), sine IAS = 180 µH; TVJ = 25°C; non repetitive VA =1.5 VRRM typ. As you said, the datasheet suggests a voltage above 130V. Avalanche Power & Switching Times Characteristic Curves V CES Avalanche Mode Operation & Basic Circuit and Description Avalanche multiplication is the mechanism where free electrons in the diffusion region collide with other atoms with enough force to create new electron-hole pairs where the new free electron repeats the process and so on. Solderable terminals as per MIL-STD-750, method 2026 standard. 815-1055 AS1PGHM3/84A Avalanche diode, 1.5A, 400V, DO-220AA. Some Part number from the same manufacture Vishay Intertechnology: BYW56 Standard Avalanche Sinterglass Diode: BYW7 Fast Avalanche Sinterglass Diode: BYW8 Standard Avalanche Sinterglass Diode: BYWB29: BYX8 Standard Avalanche Sinterglass Diode: BZD27 Voltage Regulator Diodes: BZG03C Silicon Zener Diodes: SI4835DY : P-channel 30-V (D-S) MOSFET. DSAI110-12F Avalanche Diode . (1.6mm) from case for 10s) Weight 11.5 (Typical) g -55 to + 150 PD- … These devices are intended to be used as freewheeling/ clamping diodes Note: Complete Technical Details can be found at the 1N4728A datasheet given at the end of this page. 4. This article discusses about a brief information about the construction and working of an avalanche diode. These devices are intended to be used as freewheeling/ clamping diodes 1.0 Voltage Grade Table . Typ. 2.0 Extension of Voltage Grades . 2. To get a gain > 1, you need to increase the voltage. 3. The 1N5625-TAP is a standard avalanche Sinterglass Diode with axial-leaded terminal. 815-1042 AS1PDHM3/84A Avalanche diode, 1.5A, 200V, DO-220AA. 1N4728A Equivalent Zener Diodes: 4.7V Zener, 5.1V Zener, 6.8V Zener, 7.5V Zener, 15V Zener . RY23 Datasheet PDF - 200V, Avalanche Diode - Sanken, RY23 pdf, RY23 pinout, RY23 equivalent, RY23 schematic, manual, R2M, RM25, RM26, RY24. Avalanche Diode Type W3842MC28A Data Sheet. EZ0150 Datasheet - Vrdc=125V, Avalanche Diode - Sanken, diode EZ0150, EZ0150 pdf, EZ0150 pinout, EZ0150 manual, EZ0150 schematic, EZ0150 equivalent, data. At this point, the APD already works like a photo diode, (i.e. Notes on Ratings and Characteristics . CRA12E0801473JRB8E3 : Thick Film … DESCRIPTION The BAX12 is a Controlled avalanche diode fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD27 (DO-35) package. STA406A: Description NPN Darlington With built-in avalanche diode: Download 1 Pages: Scroll/Zoom: 100% : Maker: SANKEN [Sanken electric] Reverse Voltage Fig. FEATURES • Hermetically sealed leaded glass SOD27 (DO-35) package • Switching speed: max. Avalanche Diode. SOT23 NPN silicon planar avalanche transistor Summary V(BR)CES = 150V, V(BR)CEO = 50V, IUSB = 25A Description The FMMT413 is a NPN silicon planar bipolar transistor optimized for avalanche mode operation. Solderable terminals as per MIL-STD-750, method 2026 standard. 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